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4 Inch LNOI Wafer Achieving Compact Photonic Integration
Product Details:
| Place of Origin: | China |
| Brand Name: | BonTek |
| Certification: | ISO:9001, ISO:14001 |
| Model Number: | LNOI Wafer |
Payment & Shipping Terms:
| Minimum Order Quantity: | 25 pcs |
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| Price: | $2000/pc |
| Packaging Details: | Cassette/ Jar package, vaccum sealed |
| Delivery Time: | 1-4 weeks |
| Payment Terms: | T/T |
| Supply Ability: | 50000 pcs/Month |
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Detail Information |
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| Product: | LiNbO3 On Insulator | Diameter: | 4 Inch, Φ100mm |
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| Top Layer: | Lithium Niobate | Top Thickness: | 300~600nm |
| Insolation: | SiO2 Thermal Oxide | Insolation Thickness: | 2000±15nm; 3000±50nm; 4700±100nm |
| Substrate: | Silicon | Application: | Optical Waveguides And Microwaveguides |
| Highlight: | LNOI Piezoelectric Wafer,4 Inch LNOI Wafer,300nm LiNbO3 On Insulator |
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Product Description
Achieving Compact Photonic Integration With 4-Inch LNOI Wafers
LNOI stands for Lithium Niobate on Insulator, which is a specialized substrate technology used in the field of integrated photonics. LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of compact and high-performance photonic devices.
The fabrication of LNOI substrates involves bonding a thin layer of LiNbO3 onto an insulating layer using techniques like wafer bonding or ion-cutting. This results in a structure where LiNbO3 is suspended on a non-conductive substrate, providing electrical isolation and reducing the optical waveguide losses.
Applications of LNOI:
- Integrated Photonics
- Optical Communication
- Sensing and Metrology
- Quantum Optics
| LNOI Wafer | |||
| Structure | LN / SiO2 / Si | LTV / PLTV | < 1.5 μm ( 5∗ 5 mm2 ) / 95% |
| Diameter | Φ100 ± 0.2 mm | Edge Exclution | 5 mm |
| Thickness | 500 ± 20 μm | Bow | Within 50 μm |
| Primary Flat Length | 47.5 ± 2 mm 57.5 ± 2 mm |
Edge Trimming | 2 ± 0.5 mm |
| Wafer Beveling | R Type | Environmental | Rohs 2.0 |
| Top LN Layer | |||
| Average Thickness | 400/600±10 nm | Uniformity | < 40nm @17 Points |
| Refraction index | no > 2.2800, ne < 2.2100 @ 633 nm | Orientation | X axis ± 0.3° |
| Grade | Optical | Surface Ra | < 0.5 nm |
| Defects | >1mm None; ≦1 mm Within 300 total |
Delamination | None |
| Scratch | >1cm None; ≦1cm Within 3 |
Primary Flat | Perpendicular to +Y Axis ± 1° |
| Isolation SiO2 Layer | |||
| Average Thickness | 2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm | Uniformity | < ±1% @17 Points |
| Fab. Method | Thermal Oxide | Refraction index | 1.45-1.47 @ 633 nm |
| Substrate | |||
| Material | Si | Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° | Resistivity | > 10 kΩ·cm |
| Backside Contamination | No visible stain | Backside | Etch |
